Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

Self-assembled InSb and GaSb quantum dots on GaAs(001)

Quantum dots of InSb and GaSb were grown on GaAs~001! by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1–2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherentl...

Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology

We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (00 1) at room temperature on hydrogen-terminated Si (00 1) . In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film growth. Post-growth x-ray diffraction indicates ...

Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy

Adsorption processes of hydrogen molecules on SiC(001), Si(001) and C(001) surfaces

Adsorption processes of hydrogen molecules on the Si(001)-(2× 1) and C(001)-(2× 1) surfaces are discussed in light of our previous studies of H2 adsorption on the related SiC(001)-c(4× 2) surface. Very amazingly, there are pathways above the latter on which hydrogen molecules can adsorb dissociatively at room temperature. One of these pathways has not been considered before for adsorption of H2...

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)